Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

F. Riesz, K. Lischka, K. Rakennus, T. Hakkarainen, A. Pesek

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown on (100) GaAs substrates misoriented towards the (100) plane was studied by high resolution X-ray diffraction. The epilayers were grown by gas-source molecular beam epitaxy. For the growth temperature of 490-500°C, the direction of the relative tilt was nearly coincident with the direction of the lattice plane tilting of the substrate, according to previous models. In contrary, when a buffer layer was deposited at a lower temperature of 400-450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed. The effect of misfit dislocations is also considered.

Original languageEnglish
Pages (from-to)127-132
Number of pages6
JournalJournal of Crystal Growth
Volume114
Issue number1-2
DOIs
Publication statusPublished - 1991

Fingerprint

Epilayers
Substrates
Gas source molecular beam epitaxy
Growth temperature
Buffer layers
Dislocations (crystals)
Nucleation
misalignment
X ray diffraction
molecular beam epitaxy
Temperature
buffers
gallium arsenide
nucleation
temperature
high resolution
Direction compound
diffraction
gases
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates : the effect of initial growth conditions. / Riesz, F.; Lischka, K.; Rakennus, K.; Hakkarainen, T.; Pesek, A.

In: Journal of Crystal Growth, Vol. 114, No. 1-2, 1991, p. 127-132.

Research output: Contribution to journalArticle

Riesz, F. ; Lischka, K. ; Rakennus, K. ; Hakkarainen, T. ; Pesek, A. / Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates : the effect of initial growth conditions. In: Journal of Crystal Growth. 1991 ; Vol. 114, No. 1-2. pp. 127-132.
@article{6a617a04fd90403d8c7bdeb1582917c5,
title = "Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions",
abstract = "The relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown on (100) GaAs substrates misoriented towards the (100) plane was studied by high resolution X-ray diffraction. The epilayers were grown by gas-source molecular beam epitaxy. For the growth temperature of 490-500°C, the direction of the relative tilt was nearly coincident with the direction of the lattice plane tilting of the substrate, according to previous models. In contrary, when a buffer layer was deposited at a lower temperature of 400-450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed. The effect of misfit dislocations is also considered.",
author = "F. Riesz and K. Lischka and K. Rakennus and T. Hakkarainen and A. Pesek",
year = "1991",
doi = "10.1016/0022-0248(91)90687-Z",
language = "English",
volume = "114",
pages = "127--132",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates

T2 - the effect of initial growth conditions

AU - Riesz, F.

AU - Lischka, K.

AU - Rakennus, K.

AU - Hakkarainen, T.

AU - Pesek, A.

PY - 1991

Y1 - 1991

N2 - The relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown on (100) GaAs substrates misoriented towards the (100) plane was studied by high resolution X-ray diffraction. The epilayers were grown by gas-source molecular beam epitaxy. For the growth temperature of 490-500°C, the direction of the relative tilt was nearly coincident with the direction of the lattice plane tilting of the substrate, according to previous models. In contrary, when a buffer layer was deposited at a lower temperature of 400-450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed. The effect of misfit dislocations is also considered.

AB - The relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown on (100) GaAs substrates misoriented towards the (100) plane was studied by high resolution X-ray diffraction. The epilayers were grown by gas-source molecular beam epitaxy. For the growth temperature of 490-500°C, the direction of the relative tilt was nearly coincident with the direction of the lattice plane tilting of the substrate, according to previous models. In contrary, when a buffer layer was deposited at a lower temperature of 400-450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed. The effect of misfit dislocations is also considered.

UR - http://www.scopus.com/inward/record.url?scp=0026237218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026237218&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)90687-Z

DO - 10.1016/0022-0248(91)90687-Z

M3 - Article

AN - SCOPUS:0026237218

VL - 114

SP - 127

EP - 132

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -