Ti 3 SiC 2 formed in annealed Al/Ti contacts to p-type SiC

B. Pécz, L. Tóth, M. A. Di Forte-Poisson, J. Vacas

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Abstract

Al (150 nm)/Ti (30 nm) contacts have been successively deposited onto p-type 6H-SiC wafers. The layer structure has been annealed at 900°C for 4min. The annealed contacts are Ohmic. The structure of the annealed contact layers was identified as a Ti 3 SiC 2 layer on SiC and covered by an Al 3 Ti layer. Both layers and phases are formed as a result of solid phase interaction between the metallic layers and SiC, and are epitaxial to the 6H-SiC. Ti 3 SiC 2 is suggested as a new contact material to p-type SiC, which promises high temperature stable contacts due to its excellent properties.

Original languageEnglish
Pages (from-to)8-11
Number of pages4
JournalApplied Surface Science
Volume206
Issue number1-4
DOIs
Publication statusPublished - Feb 15 2003

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Keywords

  • Ohmic contacts
  • SiC
  • Solid phase reactions
  • Thin films
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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