THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

Matthias C. Hoffmann, J. Hebling, Harold Y. Hwang, Ka Lo Yeh, Keith A. Nelson

Research output: Contribution to journalArticle

91 Citations (Scopus)

Abstract

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free-carrier absorption saturation at temperatures of 300 K and 200 K, respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy, which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.

Original languageEnglish
JournalJournal of the Optical Society of America B: Optical Physics
Volume26
Issue number9
DOIs
Publication statusPublished - Sep 1 2009

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field strength
pumps
probes
spectroscopy
ionization
pumping
saturation
cooling
evaluation
pulses
excitation
temperature
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Statistical and Nonlinear Physics

Cite this

THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]. / Hoffmann, Matthias C.; Hebling, J.; Hwang, Harold Y.; Yeh, Ka Lo; Nelson, Keith A.

In: Journal of the Optical Society of America B: Optical Physics, Vol. 26, No. 9, 01.09.2009.

Research output: Contribution to journalArticle

Hoffmann, Matthias C. ; Hebling, J. ; Hwang, Harold Y. ; Yeh, Ka Lo ; Nelson, Keith A. / THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]. In: Journal of the Optical Society of America B: Optical Physics. 2009 ; Vol. 26, No. 9.
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