Three-dimensional scanning of ion-implanted porous silicon

A. Simon, F. Pászti, A. Manuaba, A. Kiss

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

As it was recently shown, the porosity of porous Si gradually decreases under ion implantation, until the sample completely transforms into a compact material. To determine the underlying elementary process, we measured the degree of densification along the ion track. Different types of porous Si layers were implanted from the side of the samples parallel to the surface by 4.0 MeV 4He+ ions. The implanted lateral spots were scanned three-dimensionally by Rutherford backscattering spectrometry (RBS) microprobe using 2 MeV 4He+ ions. Results obtained for columnar and spongy type porous Si samples clearly indicate that the densification occurs most intensively in a narrow depth region around the penetration depth of the ions, i.e., it is mainly caused by ion cascades. Based on this phenomenon, production of deeply buried narrow compact layers in porous materials seems to be accessible.

Original languageEnglish
Pages (from-to)658-664
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume158
Issue number1
DOIs
Publication statusPublished - Sep 2 1999

Fingerprint

Porous silicon
porous silicon
Ions
Scanning
scanning
densification
ions
Densification
Rutherford backscattering spectroscopy
porous materials
Ion implantation
Spectrometry
Porous materials
ion implantation
backscattering
cascades
penetration
Porosity
porosity
spectroscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{978222b5bd7c45129a9a8b69ba9c71d0,
title = "Three-dimensional scanning of ion-implanted porous silicon",
abstract = "As it was recently shown, the porosity of porous Si gradually decreases under ion implantation, until the sample completely transforms into a compact material. To determine the underlying elementary process, we measured the degree of densification along the ion track. Different types of porous Si layers were implanted from the side of the samples parallel to the surface by 4.0 MeV 4He+ ions. The implanted lateral spots were scanned three-dimensionally by Rutherford backscattering spectrometry (RBS) microprobe using 2 MeV 4He+ ions. Results obtained for columnar and spongy type porous Si samples clearly indicate that the densification occurs most intensively in a narrow depth region around the penetration depth of the ions, i.e., it is mainly caused by ion cascades. Based on this phenomenon, production of deeply buried narrow compact layers in porous materials seems to be accessible.",
author = "A. Simon and F. P{\'a}szti and A. Manuaba and A. Kiss",
year = "1999",
month = "9",
day = "2",
doi = "10.1016/S0168-583X(99)00386-9",
language = "English",
volume = "158",
pages = "658--664",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Three-dimensional scanning of ion-implanted porous silicon

AU - Simon, A.

AU - Pászti, F.

AU - Manuaba, A.

AU - Kiss, A.

PY - 1999/9/2

Y1 - 1999/9/2

N2 - As it was recently shown, the porosity of porous Si gradually decreases under ion implantation, until the sample completely transforms into a compact material. To determine the underlying elementary process, we measured the degree of densification along the ion track. Different types of porous Si layers were implanted from the side of the samples parallel to the surface by 4.0 MeV 4He+ ions. The implanted lateral spots were scanned three-dimensionally by Rutherford backscattering spectrometry (RBS) microprobe using 2 MeV 4He+ ions. Results obtained for columnar and spongy type porous Si samples clearly indicate that the densification occurs most intensively in a narrow depth region around the penetration depth of the ions, i.e., it is mainly caused by ion cascades. Based on this phenomenon, production of deeply buried narrow compact layers in porous materials seems to be accessible.

AB - As it was recently shown, the porosity of porous Si gradually decreases under ion implantation, until the sample completely transforms into a compact material. To determine the underlying elementary process, we measured the degree of densification along the ion track. Different types of porous Si layers were implanted from the side of the samples parallel to the surface by 4.0 MeV 4He+ ions. The implanted lateral spots were scanned three-dimensionally by Rutherford backscattering spectrometry (RBS) microprobe using 2 MeV 4He+ ions. Results obtained for columnar and spongy type porous Si samples clearly indicate that the densification occurs most intensively in a narrow depth region around the penetration depth of the ions, i.e., it is mainly caused by ion cascades. Based on this phenomenon, production of deeply buried narrow compact layers in porous materials seems to be accessible.

UR - http://www.scopus.com/inward/record.url?scp=0343081368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343081368&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00386-9

DO - 10.1016/S0168-583X(99)00386-9

M3 - Article

AN - SCOPUS:0343081368

VL - 158

SP - 658

EP - 664

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1

ER -