Thin TaC layer produced by ion mixing

Árpád Barna, László Kotis, Béla Pécz, Attila Sulyok, György Sáfrán, Attila L. Tóth, Miklós Menyhárd, András Kovács, Alexey Savenko

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ion-beam mixing in C/Ta layered systems was investigated. C 8nm/Ta 12nm and C 20nm/Ta 19nm/C 20nm layer systems were irradiated by Ga + ions of energy in the range of 2-30keV. In case of the 8nm and 20nm thick C cover layers applying 5-8keV and 20-30keV Ga + ion energy, respectively resulted in strongly asymmetric ion mixing; the carbon was readily transported to the Ta layer, while the reverse process was much weaker. Because of the asymmetrical transport the C/TaC interface remained sharp independently from the applied fluence. The carbon transported to the Ta layer formed TaC x. The stoichiometry of the carbide produced varied along the depth. The TaC x layer contained implanted Ga, the concentration of which decreased with increasing depth. The thickness of the TaC x layer could be tailored by the ion fluence and energy making possible to produce coating layer of desired thickness.

Original languageEnglish
Pages (from-to)3917-3922
Number of pages6
JournalSurface and Coatings Technology
Volume206
Issue number19-20
DOIs
Publication statusPublished - May 25 2012

Keywords

  • Defect mediated compound formation
  • Ion mixing
  • TaC
  • TaC coating
  • Tantalum carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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