Thin film homogenization by inverse pulsed laser deposition

Laszlo Egerhazi, Zsolt Geretovszky, Ferenc Bari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently we proposed a novel PLD arrangement, termed inverse pulsed laser deposition (IPLD). Being able to produce thin films of better surface morphology without any complex instrumentation, this method can represent an alternative to the traditional PLD technique while preserving versatility. Two configurations of this new target-substrate arrangement, namely static and co-rotating IPLD were developed. In the static IPLD configuration, the substrate is stationary with respect to the ablated spot; while in the co-rotating IPLD configuration the substrate is fixed to the target surface and rotates simultaneously with the target. Co-rotating IPLD proved to be capable of homogenizing the film thickness. Here we report a model calculation supported by experimental results to describe the radial growth rate variation of co-rotating IPLD films. To characterize the homogeneity of CNx, TiOx, and Ti co-rotating IPLD films, a thickness inhomogeneity index (TII) was introduced, which allows the comparison of thickness homogeneity between films of different lateral dimensions. The presented semi-analytical, semi-numerical model derives the radial variation of the growth rate of co-rotating IPLD films from the lateral growth rate distributions measured along the symmetry axes of the static IPLD films. The laterally averaged growth rate (LAGR) was used to describe how the ambient pressure affects thin film growth in the 0.5-50 Pa domain. As an example, the absolute error between the measured and calculated radial growth rate variation of CNx layers grown by co-rotating IPLD at 5 Pa, was less than 3%, while the LAGR was predicted with 20% accuracy.

Original languageEnglish
Title of host publication16th International School on Quantum Electronics
Subtitle of host publicationLaser Physics and Applications
DOIs
Publication statusPublished - Feb 23 2011
Event16th International School on Quantum Electronics: Laser Physics and Applications - Nessebar, Bulgaria
Duration: Sep 20 2010Sep 24 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7747
ISSN (Print)0277-786X

Other

Other16th International School on Quantum Electronics: Laser Physics and Applications
CountryBulgaria
CityNessebar
Period9/20/109/24/10

Keywords

  • Carbon nitride
  • IPLD
  • Inhomogeneity index
  • Inverse pulsed laser deposition
  • PLD
  • Pulsed laser deposition
  • Thickness homogenization
  • Thin film
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Thin film homogenization by inverse pulsed laser deposition'. Together they form a unique fingerprint.

  • Cite this

    Egerhazi, L., Geretovszky, Z., & Bari, F. (2011). Thin film homogenization by inverse pulsed laser deposition. In 16th International School on Quantum Electronics: Laser Physics and Applications [774706] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7747). https://doi.org/10.1117/12.882050