Thin film growth by inverse pulsed laser deposition

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The properties of carbon nitride films deposited in inverse pulsed laser deposition (IPLD) geometry, in which the backward motion of the ablated species is utilised for film growth on substrates lying in the target plane, are compared with those grown simultaneously in the traditional on-axis position. Within the 2-50 Pa pressure window the growth rate of the IPLD films increases nearly linearly with the logarithm of nitrogen pressure, and exceeds that of their on-axis counterparts at around 20 Pa. The IPLD films are more protected against the deposition of micron-sized particulates, consist of smaller grains and exhibit denser structure than the on-axis films, especially above 10 Pa. The chemical structure of the films is unaffected by the geometry with slightly lower nitrogen content in the IPLD case. The morphological properties of IPLD films are superior to those grown in the classical configuration, suggesting that the advantageous contribution of hyperthermal energy species has not been lost in the inverse geometry.

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalThin Solid Films
Volume484
Issue number1-2
DOIs
Publication statusPublished - Jul 22 2005

Fingerprint

Film growth
Pulsed laser deposition
pulsed laser deposition
Thin films
thin films
Geometry
Nitrogen
geometry
Carbon nitride
nitrogen
carbon nitrides
logarithms
particulates
Substrates
configurations

Keywords

  • AFM
  • Carbon nitride
  • IPLD
  • Laser ablation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Thin film growth by inverse pulsed laser deposition. / Szörényi, T.; Geretovszky, Z.

In: Thin Solid Films, Vol. 484, No. 1-2, 22.07.2005, p. 165-169.

Research output: Contribution to journalArticle

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