Thickness dependent phase formation in Fe thin film and Si substrate solid phase reaction

Gy Molnar, G. Peto, E. Zsoldos, Z. E. Horvath, N. Q. Khanh

Research output: Contribution to journalConference article

5 Citations (Scopus)


The solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 nm in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy. After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.

Original languageEnglish
Pages (from-to)337-342
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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