Thickness-dependent formation of Gd-silicide compounds

G. Molnár, I. Geröcs, G. Pető, E. Zsoldos, E. Jároli, J. Gyulai

Research output: Contribution to journalArticle

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Abstract

Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≊1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi 2, at ∼250 nm hexagonal GdSi≊1.7. In the 300-1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by Gösele and Tu [J. Appl. Phys. 53, 3252 (1982)].

Original languageEnglish
Pages (from-to)6746-6749
Number of pages4
JournalJournal of Applied Physics
Volume64
Issue number12
DOIs
Publication statusPublished - 1988

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backscattering
x ray diffraction
heat treatment
intervals
annealing
temperature
silicon
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thickness-dependent formation of Gd-silicide compounds. / Molnár, G.; Geröcs, I.; Pető, G.; Zsoldos, E.; Jároli, E.; Gyulai, J.

In: Journal of Applied Physics, Vol. 64, No. 12, 1988, p. 6746-6749.

Research output: Contribution to journalArticle

Molnár, G. ; Geröcs, I. ; Pető, G. ; Zsoldos, E. ; Jároli, E. ; Gyulai, J. / Thickness-dependent formation of Gd-silicide compounds. In: Journal of Applied Physics. 1988 ; Vol. 64, No. 12. pp. 6746-6749.
@article{17ad1a6e17a648e0a7b5fbfea7fcfe3c,
title = "Thickness-dependent formation of Gd-silicide compounds",
abstract = "Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≊1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi 2, at ∼250 nm hexagonal GdSi≊1.7. In the 300-1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by G{\"o}sele and Tu [J. Appl. Phys. 53, 3252 (1982)].",
author = "G. Moln{\'a}r and I. Ger{\"o}cs and G. Pető and E. Zsoldos and E. J{\'a}roli and J. Gyulai",
year = "1988",
doi = "10.1063/1.342006",
language = "English",
volume = "64",
pages = "6746--6749",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Thickness-dependent formation of Gd-silicide compounds

AU - Molnár, G.

AU - Geröcs, I.

AU - Pető, G.

AU - Zsoldos, E.

AU - Jároli, E.

AU - Gyulai, J.

PY - 1988

Y1 - 1988

N2 - Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≊1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi 2, at ∼250 nm hexagonal GdSi≊1.7. In the 300-1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by Gösele and Tu [J. Appl. Phys. 53, 3252 (1982)].

AB - Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≊1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi 2, at ∼250 nm hexagonal GdSi≊1.7. In the 300-1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by Gösele and Tu [J. Appl. Phys. 53, 3252 (1982)].

UR - http://www.scopus.com/inward/record.url?scp=21544450450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544450450&partnerID=8YFLogxK

U2 - 10.1063/1.342006

DO - 10.1063/1.342006

M3 - Article

AN - SCOPUS:21544450450

VL - 64

SP - 6746

EP - 6749

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -