Thickness dependent formation and properties of GdSi2/Si(100) interfaces

G. Petõ, G. Molnár, L. Dózsa, Z. E. Horváth, Zs J. Horváth, E. Zsoldos, C. A. Dimitriadis, L. Papadimitriou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial and polycrystalline orthorhombic GdSi2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi2/Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 1010 cm-2), while the non-epitaxial growth induced defects of a much higher density (about 1012 cm -2). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi2/Si interface.

Original languageEnglish
Pages (from-to)975-980
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number5
DOIs
Publication statusPublished - Oct 1 2005

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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