Thickness dependent aggregation of Fe-silicide islands on Si substrate

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17 Citations (Scopus)


Iron-silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The phases formed were identified by X-ray diffraction. The thickness of the evaporated Fe films ranged from 1.5 to 30 nm and the in situ heat treatments were carried out between 500 and 800 °C. Self-assembled, island like, oriented β-FeSi2 and α-FeSi2 were found to grow on Si(100) substrates under 15 nm initial Fe thickness. The size of the islands was between 20 and 500 nm, and their shape varied from circular to faceted triangular and quadratic depending on the Fe thickness and on the annealing. Above 20 nm evaporated Fe thickness, the samples show islands of β-FeSi2 phase grown into the FeSi matrix indicating a nucleation controlled type transition of the FeSi to β-FeSi2 phase.

Original languageEnglish
Pages (from-to)48-52
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Jul 1 2004
EventProceedings of the Eight European Vacuum Congress Berlin 2003 - Berlin, Germany
Duration: Jun 23 2004Jun 26 2004


  • Epitaxy
  • Iron-silicide
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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