A method is described for preparing ≥5 μm self-supporting amorphous germanium films of high purity. Germanium is evaporated by electron bombardment which results in ionization of 2-5% of the molecules leaving the source. High stress in the condensed film caused by thermal expansion differences at the substrate-film boundary could be deterred by a plastic layer. By regulating the substrate temperature during the deposition, smooth planar films could be produced.
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