Thermoreflectance study of the direct energy gap of GaSb

V. Bellani, S. Di Lernia, M. Geddo, G. Guizzetti, A. Bosacchi, S. Franchi, R. Magnanini

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Abstract

We studied the optical properties of high quality GaSb layers, grown by molecular beam epitaxy, in the region of the fundamental gap E0 using thermoreflectance spectroscopy in the temperature range between 80 and 300 K. The experimental line-shapes were analyzed with a functional form model including excitonic effects. Taking advantage of the derivative-like nature of the thermoreflectance spectroscopy, an accurate determination of the temperature dependence of the energy gap E0(T) is obtained, which is well reproduced by the semi-empirical Varshni relation.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalSolid State Communications
Volume104
Issue number2
DOIs
Publication statusPublished - Oct 1997

Keywords

  • A. semiconductors
  • B. epitaxy
  • D. optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Bellani, V., Di Lernia, S., Geddo, M., Guizzetti, G., Bosacchi, A., Franchi, S., & Magnanini, R. (1997). Thermoreflectance study of the direct energy gap of GaSb. Solid State Communications, 104(2), 81-84. https://doi.org/10.1016/S0038-1098(97)00277-9