Thermoluminescence (TL) of Bi4Si3O12 and Bi4Ge3O12 crystals has been studied in the 18-290 K and 30-390°C temperature ranges induced by X-ray, UV abd β irradiation. While the TL emission spectra were found to be essentially the same for Bi4Si3O12 and Bi4Ge3O12 crystals, remarkable difference was observed in the glow curve temperatures especially in the 18-290 K region. The nature of the trapping and recombination centers is discussed.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics