Thermally stimulated processes involving defects in γ- and x-irradiated spinel (MgAl2O4)

A. Lőrincz, M. Puma, F. J. James, J. H. Crawford

Research output: Contribution to journalArticle

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Abstract

Thermally stimulated conductivity (TSC) and thermally stimulated luminescence (TSL) of spinel single crystals exposed to ionizing radiation have been studied. TSC exhibits peaks at 70, 125, and 340°C whereas TSL peaks occur at 70 and 260°C. The 70°C peak has an activation energy of 0.95 eV and is due to electron release; it has two main spectral components at 260 nm (4.8 eV) and 310 nm (4.0 eV) due to electron capture at trapped holes. The 260°C TSL peak is broad but singly activated (1.5 eV activation) and is dominated by 710 nm (1.75 eV) and 520 nm (2.39 eV) emission due to hole capture at Cr2+ and V2+, respectively. The broad 340°TSC peak appears to contain a substantial contribution due to electron release in the 240-310°C range which makes only a small contribution (260 and 310-nm light) to the TSL peak in this region. Dose dependence and room-temperature decay indicate that initially a substantial portion of the 260-nm afterglow is due to tunneling recombination.

Original languageEnglish
Pages (from-to)927-932
Number of pages6
JournalJournal of Applied Physics
Volume53
Issue number2
DOIs
Publication statusPublished - 1982

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spinel
defects
luminescence
conductivity
afterglows
electron capture
ionizing radiation
electrons
activation
activation energy
dosage
single crystals
decay
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Thermally stimulated processes involving defects in γ- and x-irradiated spinel (MgAl2O4). / Lőrincz, A.; Puma, M.; James, F. J.; Crawford, J. H.

In: Journal of Applied Physics, Vol. 53, No. 2, 1982, p. 927-932.

Research output: Contribution to journalArticle

Lőrincz, A. ; Puma, M. ; James, F. J. ; Crawford, J. H. / Thermally stimulated processes involving defects in γ- and x-irradiated spinel (MgAl2O4). In: Journal of Applied Physics. 1982 ; Vol. 53, No. 2. pp. 927-932.
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