Thermal transient characterization of pHEMT devices

Zoltán Sárkány, Gábor Farkas, Márta Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In this paper the issues of thermal transient measurement of heterostructure field-effect transistors are discussed. It is shown that the measurement setups used for MOSFET devices may produce artifacts. Even though the measured transients may seem to be thermal, at the calibration of the measured temperature sensitive parameter no temperature dependency is observed. The influence of the gatelag effect is discussed, which is a plausible reason of the electric transients with a time constant in a few millisecond range. Finally a practical measurement setup is presented utilizing the forward voltage of the Schottky barrier gate as a temperature sensitive parameter.

Original languageEnglish
Title of host publication18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012
Pages225-228
Number of pages4
Publication statusPublished - Dec 1 2012
Event18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012 - Budapest, Hungary
Duration: Sep 25 2012Sep 27 2012

Publication series

Name18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012

Other

Other18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012
CountryHungary
CityBudapest
Period9/25/129/27/12

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Sárkány, Z., Farkas, G., & Rencz, M. (2012). Thermal transient characterization of pHEMT devices. In 18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012 (pp. 225-228). [6400639] (18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012).