Thermal spike analysis of ion-induced tracks in semiconductors

Research output: Contribution to journalArticle

17 Citations (Scopus)


Track data reported in InP and GaAs are analyzed according to the analytical thermal spike model (ATSM) and good agreement with the predictions is found. The Gaussian width of the thermal spike is a(0) ≈ 11 nm compared to a(0) = 4.5 nm in insulators. When the ion velocity v p is high (E > 8 MeV/nucleon), a similar fraction of the electronic stopping power S e is transformed into thermal energy of the spike in insulators and semiconductors. The results show that - compared to insulators - v p affects only slightly the track sizes in semiconductors, which is explained qualitatively by the Coulomb explosion mechanism. The reported correlation between the bandgap energy E g and a(0) is completed with new data. The results of previous analyses of ion-induced tracks in InP by ATSM are discussed.

Original languageEnglish
Pages (from-to)2075-2079
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number19
Publication statusPublished - Oct 1 2011


  • Coulomb explosion
  • Semiconductors
  • Swift ions
  • Thermal spike
  • Tracks
  • Velocity effect

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Thermal spike analysis of ion-induced tracks in semiconductors'. Together they form a unique fingerprint.

  • Cite this