Thermal quenching of photoluminescence in GeSe2 glass, thin films and crystals

M. Koós, I. Kósa Somogyi, V. A. Vassilyev

Research output: Contribution to journalArticle

5 Citations (Scopus)


Investigations were carried out on the temperature dependence of the photoluminescence intensity and the emission band characteristics in GeSe2 glasses, evaporated thin films and crystals at T >80 K, paying special attention to the fatigue taking place 20-50 s from the onset of excitation. From the temperature dependence of the initial and quasi-steady-state values of the PL intensity an activation energy 295-30 meV at T >210 K was deduced for the glass whereas two activation energies E1=56±2 meV and E2=96±3 meV were deduced for the crystalline GeSe2. The strong fatigue observed in the evaporated thin films was attributed to their loose structure. The fast fatigue in the crystal was considered to result from the recombination of quasi-excitons through radiative and non-radiative channels. A configuration coordinate diagram involving a stable and a metastable state is proposed as a means of explaining this type of fatigue. The temperature dependence of the PL intensity is discussed in terms of a recently proposed model.

Original languageEnglish
Pages (from-to)449-462
Number of pages14
JournalJournal of Luminescence
Issue number4
Publication statusPublished - Jan 1 1982

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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