Thermal oxidation of porous silicon: Study on structure

A. E. Pap, K. Kordás, G. Tóth, J. Levoska, A. Uusimäki, J. Vähäkangas, S. Leppävuori, T. F. George

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The structural changes of porous silicon (PS) samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction. It is found that the surface roughness of oxidized PS layers increases with the oxidation at 200-400°C and decreased at 600-800°C. At 800°C a partially fused surface is observed. The oxide formed on the wall of porous silicon skeleton is amorphous. The shifts of Si(400) peaks are observed in the x-ray diffraction patterns, which are correlated to the lattice deformation induced by thermal expansion coefficient mismatch between the grown SiO 2 and the residual Si, and to the intrinsic stress caused by the Si-O bonds at the Si-SiO 2 interface. These explanations are supported by thermomechanical modeling using three-dimensional finite element method.

Original languageEnglish
Article number041501
Pages (from-to)041501-1-041501-3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - Feb 25 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Pap, A. E., Kordás, K., Tóth, G., Levoska, J., Uusimäki, A., Vähäkangas, J., Leppävuori, S., & George, T. F. (2005). Thermal oxidation of porous silicon: Study on structure. Applied Physics Letters, 86(4), 041501-1-041501-3. [041501].