Thermal oxidation of porous silicon

Study on structure

A. Pap, K. Kordás, G. Tóth, J. Levoska, A. Uusimäki, J. Vähäkangas, S. Leppävuori, T. F. George

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

The structural changes of porous silicon (PS) samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction. It is found that the surface roughness of oxidized PS layers increases with the oxidation at 200-400°C and decreased at 600-800°C. At 800°C a partially fused surface is observed. The oxide formed on the wall of porous silicon skeleton is amorphous. The shifts of Si(400) peaks are observed in the x-ray diffraction patterns, which are correlated to the lattice deformation induced by thermal expansion coefficient mismatch between the grown SiO 2 and the residual Si, and to the intrinsic stress caused by the Si-O bonds at the Si-SiO 2 interface. These explanations are supported by thermomechanical modeling using three-dimensional finite element method.

Original languageEnglish
Article number041501
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
Publication statusPublished - 2005

Fingerprint

porous silicon
oxidation
x ray diffraction
musculoskeletal system
thermal expansion
finite element method
surface roughness
diffraction patterns
microscopy
oxides
shift
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Pap, A., Kordás, K., Tóth, G., Levoska, J., Uusimäki, A., Vähäkangas, J., ... George, T. F. (2005). Thermal oxidation of porous silicon: Study on structure. Applied Physics Letters, 86(4), [041501]. https://doi.org/10.1063/1.1853519

Thermal oxidation of porous silicon : Study on structure. / Pap, A.; Kordás, K.; Tóth, G.; Levoska, J.; Uusimäki, A.; Vähäkangas, J.; Leppävuori, S.; George, T. F.

In: Applied Physics Letters, Vol. 86, No. 4, 041501, 2005.

Research output: Contribution to journalArticle

Pap, A, Kordás, K, Tóth, G, Levoska, J, Uusimäki, A, Vähäkangas, J, Leppävuori, S & George, TF 2005, 'Thermal oxidation of porous silicon: Study on structure', Applied Physics Letters, vol. 86, no. 4, 041501. https://doi.org/10.1063/1.1853519
Pap A, Kordás K, Tóth G, Levoska J, Uusimäki A, Vähäkangas J et al. Thermal oxidation of porous silicon: Study on structure. Applied Physics Letters. 2005;86(4). 041501. https://doi.org/10.1063/1.1853519
Pap, A. ; Kordás, K. ; Tóth, G. ; Levoska, J. ; Uusimäki, A. ; Vähäkangas, J. ; Leppävuori, S. ; George, T. F. / Thermal oxidation of porous silicon : Study on structure. In: Applied Physics Letters. 2005 ; Vol. 86, No. 4.
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