Thermal oxidation of porous silicon: Study on reaction kinetics

A. Pap, Krisztián Kordás, Thomas F. George, Seppo Leppävuori

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Porous silicon (PS) samples obtained by dark etching of p +-type silicon wafers are oxidized in dry air, at various temperatures from 200°C up to 800°C for 1-20 h durations, to determine the kinetics of the reaction. The extent of oxidation calculated from mass gains is plotted as a function of oxidation time and temperature. By fitting the general reaction kinetic solutions of different-order reactions, one finds that the function valid for first-order kinetics gives the best matches. From the obtained reaction rates, the pre-exponential factors and activation energies of the oxidation process are determined using Arrhenius plots. It is found that, depending on the temperature range of the oxidation process, either one or two chemical reactions take place. At lower temperatures (200-400°C), a reaction with an activation energy E a,1 ≈ 7 kJ·mol -1 and a pre-exponential factor A 1 ≈ 0.2 h -1 dominates. When the temperature is increased (400-800°C), a second reaction starts, showing E a,2 ≈ 50 kJ·mol -1 and A 2 ≈ 100 h -1.

Original languageEnglish
Pages (from-to)12744-12747
Number of pages4
JournalJournal of Physical Chemistry B
Volume108
Issue number34
DOIs
Publication statusPublished - Aug 26 2004

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Porous silicon
porous silicon
Reaction kinetics
reaction kinetics
Oxidation
oxidation
activation energy
Temperature
Activation energy
temperature
kinetics
Arrhenius plots
Kinetics
chemical reactions
Silicon wafers
plots
etching
Reaction rates
wafers
Chemical reactions

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Thermal oxidation of porous silicon : Study on reaction kinetics. / Pap, A.; Kordás, Krisztián; George, Thomas F.; Leppävuori, Seppo.

In: Journal of Physical Chemistry B, Vol. 108, No. 34, 26.08.2004, p. 12744-12747.

Research output: Contribution to journalArticle

Pap, A, Kordás, K, George, TF & Leppävuori, S 2004, 'Thermal oxidation of porous silicon: Study on reaction kinetics', Journal of Physical Chemistry B, vol. 108, no. 34, pp. 12744-12747. https://doi.org/10.1021/jp049323y
Pap, A. ; Kordás, Krisztián ; George, Thomas F. ; Leppävuori, Seppo. / Thermal oxidation of porous silicon : Study on reaction kinetics. In: Journal of Physical Chemistry B. 2004 ; Vol. 108, No. 34. pp. 12744-12747.
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