Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling

Isabelle Trimaille, Jean Jacques Ganem, Ian C. Vickridge, Serge Rigo, Gabor Battistig, Edit Szilagyi, Israel J. Baumvol, Claudio Radtke, Fernanda C. Stedile

Research output: Contribution to journalConference article

11 Citations (Scopus)


We show that on SiC (0001̄) (the fast-oxidizing carbon face), at 1100 °C and 100 mbar, the oxide exhibits an initial fast growth regime, followed by a constant growth rate confirming previous results that oxide growth is not limited by diffusion of the oxidizing species or reaction products through the oxide. At 1100 °C, in this linear regime, the growth rate also exhibits a linear dependence with oxygen pressure. The silicon face shows sub-linear pressure dependence. A simple oxidation model is ruled out since, on both SiC faces, sequential 16O2/18O2/ 16O2 oxidations show that oxygen fixed in the oxide, near the SiC/SiO2 interface moves during subsequent growth.

Original languageEnglish
Pages (from-to)914-918
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Jun 1 2004
EventProceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States
Duration: Jun 29 2003Jul 4 2003


  • Atomic transport
  • NRP
  • Narrow nuclear resonance
  • Oxidation
  • SiC
  • SiO
  • Silicon carbide

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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