Thermal-oxidation-induced strain in 31P+-implanted Si〈100〉

L. Zsoldos, G. Petö, V. Schiller, E. Zsoldos, G. Brogren

Research output: Contribution to journalArticle

1 Citation (Scopus)


Si〈100〉 was implanted by 31P+ and annealed in Ar and O2 at 630-1150 °C. In O2 above 1000 °C a characteristic strain developed in the near-surface layer depending on the temperature of the heat treatment, but a similar effect was not observed after annealing in Ar. The formation of strain is explained by a nonperfect near-surface regrowth.

Original languageEnglish
Pages (from-to)1555-1557
Number of pages3
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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