Thermal nitridation of p-type porous silicon in ammonia

V. Morazzani, J. L. Cantin, C. Ortega, B. Pajot, R. Rahbi, M. Rosenbauer, H. J. Von Bardeleben, E. Vázsonyi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The effect of nitridation at 1 000°C in ammonia on porous silicon photoluminescence was studied. These investigations correlated the composition, the paramagnetic defects and the photoluminescence intensity. The composition of the porous layers was determined using nuclear microanalysis and Fourier transform infrared spectroscopy at 8 K. The paramagnetic defects were assessed by electron paramagnetic resonance. The results show that the hydrogen is removed from the SiHx species during the nitridation and that only nitrogen is incorporated in the layer, in the absence of hydrogen coming from ammonia. The paramagnetic defect concentration which increases at first due to the removal of hydrogen, decreases during further nitridation. The photoluminescence intensity is strongly correlated with the defect concentration. This passivation which is presently under studies is more stable than the passivation by hydrogen. Annealing at 600°C does not lead to any increase of defect concentration.

Original languageEnglish
Pages (from-to)32-35
Number of pages4
JournalThin Solid Films
Volume276
Issue number1-2
Publication statusPublished - Apr 15 1996

Fingerprint

Nitridation
Porous silicon
porous silicon
Ammonia
ammonia
Hydrogen
Defects
defects
Photoluminescence
hydrogen
photoluminescence
Passivation
passivity
Microanalysis
Chemical analysis
microanalysis
Fourier transform infrared spectroscopy
Paramagnetic resonance
electron paramagnetic resonance
Nitrogen

Keywords

  • Ammonia
  • Luminescence
  • Nitridation
  • Silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Morazzani, V., Cantin, J. L., Ortega, C., Pajot, B., Rahbi, R., Rosenbauer, M., ... Vázsonyi, E. (1996). Thermal nitridation of p-type porous silicon in ammonia. Thin Solid Films, 276(1-2), 32-35.

Thermal nitridation of p-type porous silicon in ammonia. / Morazzani, V.; Cantin, J. L.; Ortega, C.; Pajot, B.; Rahbi, R.; Rosenbauer, M.; Von Bardeleben, H. J.; Vázsonyi, E.

In: Thin Solid Films, Vol. 276, No. 1-2, 15.04.1996, p. 32-35.

Research output: Contribution to journalArticle

Morazzani, V, Cantin, JL, Ortega, C, Pajot, B, Rahbi, R, Rosenbauer, M, Von Bardeleben, HJ & Vázsonyi, E 1996, 'Thermal nitridation of p-type porous silicon in ammonia', Thin Solid Films, vol. 276, no. 1-2, pp. 32-35.
Morazzani V, Cantin JL, Ortega C, Pajot B, Rahbi R, Rosenbauer M et al. Thermal nitridation of p-type porous silicon in ammonia. Thin Solid Films. 1996 Apr 15;276(1-2):32-35.
Morazzani, V. ; Cantin, J. L. ; Ortega, C. ; Pajot, B. ; Rahbi, R. ; Rosenbauer, M. ; Von Bardeleben, H. J. ; Vázsonyi, E. / Thermal nitridation of p-type porous silicon in ammonia. In: Thin Solid Films. 1996 ; Vol. 276, No. 1-2. pp. 32-35.
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AB - The effect of nitridation at 1 000°C in ammonia on porous silicon photoluminescence was studied. These investigations correlated the composition, the paramagnetic defects and the photoluminescence intensity. The composition of the porous layers was determined using nuclear microanalysis and Fourier transform infrared spectroscopy at 8 K. The paramagnetic defects were assessed by electron paramagnetic resonance. The results show that the hydrogen is removed from the SiHx species during the nitridation and that only nitrogen is incorporated in the layer, in the absence of hydrogen coming from ammonia. The paramagnetic defect concentration which increases at first due to the removal of hydrogen, decreases during further nitridation. The photoluminescence intensity is strongly correlated with the defect concentration. This passivation which is presently under studies is more stable than the passivation by hydrogen. Annealing at 600°C does not lead to any increase of defect concentration.

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