Photoresist pattern distortion during high temperature heat treatments is defined mainly by height-to-width aspect ratio of the photoresist image and temperature of the heat treatment. SEM pictures show that as-developed resist patterns with different horizontal and vertical dimensions but identical height-to-width aspect ratios have a cross-section of the same shape after the heating process. To produce resist patterns without any linewidth alterations one has to select a different baking temperature for each individual pattern geometry.
|Title of host publication||Unknown Host Publication Title|
|Number of pages||6|
|Publication status||Published - Dec 1 1983|
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