THERMAL FLOW OF POSITIVE PHOTORESIST.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoresist pattern distortion during high temperature heat treatments is defined mainly by height-to-width aspect ratio of the photoresist image and temperature of the heat treatment. SEM pictures show that as-developed resist patterns with different horizontal and vertical dimensions but identical height-to-width aspect ratios have a cross-section of the same shape after the heating process. To produce resist patterns without any linewidth alterations one has to select a different baking temperature for each individual pattern geometry.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages337-342
Number of pages6
ISBN (Print)0120449803
Publication statusPublished - 1983

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Photoresists
Aspect ratio
Heat treatment
Industrial heating
Linewidth
Temperature
Scanning electron microscopy
Geometry
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Vázsonyi, E., & Vértesy, Z. (1983). THERMAL FLOW OF POSITIVE PHOTORESIST. In Unknown Host Publication Title (pp. 337-342). Academic Press.

THERMAL FLOW OF POSITIVE PHOTORESIST. / Vázsonyi, E.; Vértesy, Z.

Unknown Host Publication Title. Academic Press, 1983. p. 337-342.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vázsonyi, E & Vértesy, Z 1983, THERMAL FLOW OF POSITIVE PHOTORESIST. in Unknown Host Publication Title. Academic Press, pp. 337-342.
Vázsonyi E, Vértesy Z. THERMAL FLOW OF POSITIVE PHOTORESIST. In Unknown Host Publication Title. Academic Press. 1983. p. 337-342
Vázsonyi, E. ; Vértesy, Z. / THERMAL FLOW OF POSITIVE PHOTORESIST. Unknown Host Publication Title. Academic Press, 1983. pp. 337-342
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