THERMAL FLOW OF POSITIVE PHOTORESIST.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoresist pattern distortion during high temperature heat treatments is defined mainly by height-to-width aspect ratio of the photoresist image and temperature of the heat treatment. SEM pictures show that as-developed resist patterns with different horizontal and vertical dimensions but identical height-to-width aspect ratios have a cross-section of the same shape after the heating process. To produce resist patterns without any linewidth alterations one has to select a different baking temperature for each individual pattern geometry.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages337-342
Number of pages6
ISBN (Print)0120449803
Publication statusPublished - Dec 1 1983

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Vazsonyi, E. B., & Vertesy, Z. (1983). THERMAL FLOW OF POSITIVE PHOTORESIST. In Unknown Host Publication Title (pp. 337-342). Academic Press.