Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study

Ferenc Riesz, L. Dobos, J. Karányi

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Abstract

The thermal decomposition of bulk and heteroepitaxial (100) InP surfaces is studied by in situ scanning electron microscopy combined with mass spectrometry. The onset of P evaporation coincides with the In droplet nucleation at about 480 °C and the major evaporation of phosphorous commences above 510 °C and corresponds to the serious deterioration of the surface. There is no significant difference between bulk and defected (heteroepitaxial InP/GaAs) samples. The relevance to InP technology is discussed.

Original languageEnglish
Pages (from-to)2672-2674
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number5
Publication statusPublished - Sep 1 1998

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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