Theory of zero bias anomalies due to paramagnetic impurities - II. Application of the theory

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Abstract

The theory of tunneling phenomena taking into account the effect of paramagnetic impurities, developed in the first part of this paper, is applied to calculate the conductance of impure junctions. Different solutions for the life-time of electrons scattered on paramagnetic impurities (e. g. resonant state or quasi-bound state solutions) are considered, and the resulting current-voltage characteristics are discussed and compared with the experimental results.

Original languageEnglish
Pages (from-to)342-359
Number of pages18
JournalPhysik der Kondensierten Materie
Volume7
Issue number5
DOIs
Publication statusPublished - Aug 1968

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Impurities
anomalies
impurities
Current voltage characteristics
life (durability)
Electrons
electric potential
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "The theory of tunneling phenomena taking into account the effect of paramagnetic impurities, developed in the first part of this paper, is applied to calculate the conductance of impure junctions. Different solutions for the life-time of electrons scattered on paramagnetic impurities (e. g. resonant state or quasi-bound state solutions) are considered, and the resulting current-voltage characteristics are discussed and compared with the experimental results.",
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