Theory of neutral divacancy in SiC

A defect for spintronics

A. Gali, A. Gällström, N. T. Son, E. Janzén

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages395-397
Number of pages3
Volume645-648
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Magnetoelectronics
Group theory
Defects
group theory
defects

Keywords

  • Divacancy
  • EPR
  • PL
  • Spintronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Gali, A., Gällström, A., Son, N. T., & Janzén, E. (2010). Theory of neutral divacancy in SiC: A defect for spintronics. In Materials Science Forum (Vol. 645-648, pp. 395-397). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.395

Theory of neutral divacancy in SiC : A defect for spintronics. / Gali, A.; Gällström, A.; Son, N. T.; Janzén, E.

Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 395-397 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gali, A, Gällström, A, Son, NT & Janzén, E 2010, Theory of neutral divacancy in SiC: A defect for spintronics. in Materials Science Forum. vol. 645-648, Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 395-397, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.395
Gali A, Gällström A, Son NT, Janzén E. Theory of neutral divacancy in SiC: A defect for spintronics. In Materials Science Forum. Vol. 645-648. Trans Tech Publications Ltd. 2010. p. 395-397. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.395
Gali, A. ; Gällström, A. ; Son, N. T. ; Janzén, E. / Theory of neutral divacancy in SiC : A defect for spintronics. Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. pp. 395-397 (Materials Science Forum).
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