Theory of electric transport through Fe/V/Fe trilayers including the effect of impurities

H. C. Herper, L. Szunyogh, P. Entel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The influence of A1 and Si impurity layers on the giant magnetoresistance (GMR) and the magnetic properties of Fe/V/Fe(110) trilayers is investigated. The calculations are performed by employing the spinpolarized Kubo-Greenwood approach and the screened Korringa-Kohn-Rostoker method for layered systems. All calculations are carried out with a fully-relativistic version. Therefore, we are able to consider also anisotropic magnetoresistance effects, which are common in Fe/V systems. We find that the AMR always makes a tiny contribution to the resistivity in alike multilayers so that the magnetoresistance is entirely due to the GMR. A reduction of the GMR due to the A1 and Si impurities is observed for current in-plane (CIP) and perpendicular (CPP) geometry. However, in the case of CIP geometry the influence of the impurities decreases with increasing V layer thickness, whereas in the CPP case the difference alternates between 0 and 7%.

Original languageEnglish
Pages (from-to)271-277
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume242
Issue number2
DOIs
Publication statusPublished - Feb 1 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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