Theory of dopant pairs in four-fold coordinated amorphous semiconductors

Krisztina Kádas, G. Ferenczy, S. Kugler

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The position of energy levels belonging to dopant pairs was investigated in substitutionally p- or n-type doped four-fold coordinated amorphous carbon and silicon by means of Hartree-Fock ab initio and the Fragment Self-Consistent Field method. Our models contain 45 to 583 carbon or silicon atoms. Boron, phosphorus and nitrogen impurities have been incorporated into the amorphous networks. It has been found that the position of midgap states are primarily determined by the separation of the impurity atoms, and the role of the random network is only subordinate. A general relationship is proposed for the determination of midgap energy levels as a function of the distance between dopant pairs investigated for amorphous carbon and silicon.

Original languageEnglish
Pages (from-to)367-371
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 1
Publication statusPublished - May 1998

Fingerprint

Amorphous semiconductors
amorphous semiconductors
Amorphous carbon
Amorphous silicon
Electron energy levels
Doping (additives)
Impurities
Atoms
Boron
carbon
silicon
Silicon
energy levels
Phosphorus
impurities
Nitrogen
Carbon
self consistent fields
atoms
phosphorus

Keywords

  • Amorphous semiconductors
  • Atoms
  • Dopant pairs
  • Energy levels
  • Impurities

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Theory of dopant pairs in four-fold coordinated amorphous semiconductors. / Kádas, Krisztina; Ferenczy, G.; Kugler, S.

In: Journal of Non-Crystalline Solids, Vol. 227-230, No. PART 1, 05.1998, p. 367-371.

Research output: Contribution to journalArticle

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