Theoretical study of small silicon clusters in 4H-SiC

T. Hornos, N. T. Son, E. Janzén, A. Gali

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and ionization energies were also calculated in order to help the identification of the defects. We propose that silicon interstitials can emit from these clusters at relatively high temperatures, which may play an important role in the formation of the DI center.

Original languageEnglish
Article number165209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number16
DOIs
Publication statusPublished - Oct 31 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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