Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC

Viktor Ivády, Igor Abrikosov, Erik Janzén, Adam Gali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Well addressable and controllable point defects in device friendly semiconductors are desired for quantum computational and quantum informational processes. Recently, such defect, an ultra-bright single photon emitter, the carbon antisite - vacancy pair, was experimentally investigated in 4H-SiC. In our theoretical work, based on ab initio calculation and group theory analysis, we provide a deeper understanding of the features of the electronic structures and the luminescence process of this defect.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages495-498
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: Sep 29 2013Oct 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

Fingerprint

emitters
Carbon
Photons
Group theory
Defects
carbon
group theory
defects
photons
Point defects
Semiconductor devices
semiconductor devices
point defects
Vacancies
Electronic structure
Luminescence
luminescence
electronic structure

Keywords

  • Carbon antisite-vacancy pair
  • Point defect
  • Single photon emitter

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Ivády, V., Abrikosov, I., Janzén, E., & Gali, A. (2014). Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. In Materials Science Forum (Vol. 778-780, pp. 495-498). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.495

Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. / Ivády, Viktor; Abrikosov, Igor; Janzén, Erik; Gali, Adam.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 495-498 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ivády, V, Abrikosov, I, Janzén, E & Gali, A 2014, Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 495-498, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.495
Ivády V, Abrikosov I, Janzén E, Gali A. Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 495-498. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.495
Ivády, Viktor ; Abrikosov, Igor ; Janzén, Erik ; Gali, Adam. / Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 495-498 (Materials Science Forum).
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