Theoretical investigation of an intrinsic defect in SiC

A. Gali, P. Deák, N. T. Son, E. Janzén

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5 Citations (Scopus)

Abstract

Ab initio calculation of the local vibrational modes of a carbon pair in the silicon vacancy (VSi+2C) shows that it cannot be the origin of the DII photoluminescence (PL) center, however, it seems likely, that this defect gives rise to the Raman peaks observed at 1080 and 1435 cm -1 in proton irradiated samples. Occupation levels of the V Si+2C defect are also predicted to facilitate experimental confirmation.

Original languageEnglish
Pages (from-to)477-480
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - Dec 1 2002

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Keywords

  • D center
  • Intrinsic defects
  • Raman centers
  • Theory

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gali, A., Deák, P., Son, N. T., & Janzén, E. (2002). Theoretical investigation of an intrinsic defect in SiC. Materials Science Forum, 389-393(1), 477-480.