The transition from linear to-parabolic growth of Cu3Si phase in Cu/a-Si system

Bence Parditka, Hanaa Zaka, Gábor Erdélyi, G. Langer, Mohammed Ibrahim, Guido Schmitz, Zoltán Balogh-Michels, Z. Erdélyi

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3 Citations (Scopus)


The solid state reaction between Cu and a-Si films was investigated at 150–200 °C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu3Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165 °C and 200 °C. At 150 °C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135 °C [Acta Materialia, 61 (2013) 7173–7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalScripta Materialia
Publication statusPublished - May 1 2018



  • Growth kinetics
  • Metal-induced crystallization
  • Silicide
  • SNMS
  • Solid state reaction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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