The structure of epitaxially grown layers and the electrical parameters of p–n junctions formed on them

J. Pfeifer, L. Gútai, Sz Haraszthy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Germanium layers were evaporated onto p‐type substrates in oil diffusion pumped systems under pressures varying between 3 × 10−5 and 1 × 10−8 torr. Evaporation parameters: CP‐4 etched (111) Ge substrate; 810°C substrate temperature; condensation rate: 3–5 μmin−1; layer thickness: 15–25 μ. Structural properties were determined by etching rate, microscopy and electron diffraction examinations. Graded p–n junctions were formed by diffusion into the layers. I–V, C–V characteristics of the junctions and storage‐time were determined. Hole concentrations between 1 × 1018 and 4 × 1015 cm−3 were found. The lifetime of the minority carriers was found to be 0.1–1 μs, depending on the pressure during evaporation. It is suggested, that the interfaces between layers and substrates possess the worst structural properties and that the electrical properties of p–n junctions are much more characteristic of the layer quality than the results of the proper structural investigations.

Original languageEnglish
Pages (from-to)85-93
Number of pages9
JournalKristall und Technik
Volume5
Issue number1
DOIs
Publication statusPublished - 1970

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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