The silicon vacancy in SiC

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N. T. Son

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

Original languageEnglish
Pages (from-to)4354-4358
Number of pages5
JournalPhysica B: Condensed Matter
Volume404
Issue number22
DOIs
Publication statusPublished - Dec 1 2009

Keywords

  • EPR
  • ODMR
  • PL
  • SiC
  • Silicon vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Janzén, E., Gali, A., Carlsson, P., Gällström, A., Magnusson, B., & Son, N. T. (2009). The silicon vacancy in SiC. Physica B: Condensed Matter, 404(22), 4354-4358. https://doi.org/10.1016/j.physb.2009.09.023