The silicon vacancy in SiC

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N. T. Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages347-352
Number of pages6
Volume615 617
DOIs
Publication statusPublished - 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

Fingerprint

Silicon
Vacancies
silicon
Magnetic resonance
magnetic resonance
Photoluminescence
photoluminescence

Keywords

  • EPR
  • ODMR
  • Photoluminescence
  • Silicon vacancy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Janzén, E., Gali, A., Carlsson, P., Gällström, A., Magnusson, B., & Son, N. T. (2009). The silicon vacancy in SiC. In Materials Science Forum (Vol. 615 617, pp. 347-352). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.347

The silicon vacancy in SiC. / Janzén, Erik; Gali, Adam; Carlsson, Patrick; Gällström, Andreas; Magnusson, Björn; Son, N. T.

Materials Science Forum. Vol. 615 617 2009. p. 347-352 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Janzén, E, Gali, A, Carlsson, P, Gällström, A, Magnusson, B & Son, NT 2009, The silicon vacancy in SiC. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 347-352, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 9/7/08. https://doi.org/10.4028/www.scientific.net/MSF.615-617.347
Janzén E, Gali A, Carlsson P, Gällström A, Magnusson B, Son NT. The silicon vacancy in SiC. In Materials Science Forum. Vol. 615 617. 2009. p. 347-352. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.347
Janzén, Erik ; Gali, Adam ; Carlsson, Patrick ; Gällström, Andreas ; Magnusson, Björn ; Son, N. T. / The silicon vacancy in SiC. Materials Science Forum. Vol. 615 617 2009. pp. 347-352 (Materials Science Forum).
@inproceedings{edb1942cd5c54673a8869b0fdb5c06b4,
title = "The silicon vacancy in SiC",
abstract = "A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.",
keywords = "EPR, ODMR, Photoluminescence, Silicon vacancy",
author = "Erik Janz{\'e}n and Adam Gali and Patrick Carlsson and Andreas G{\"a}llstr{\"o}m and Bj{\"o}rn Magnusson and Son, {N. T.}",
year = "2009",
doi = "10.4028/www.scientific.net/MSF.615-617.347",
language = "English",
isbn = "9780878493340",
volume = "615 617",
series = "Materials Science Forum",
pages = "347--352",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - The silicon vacancy in SiC

AU - Janzén, Erik

AU - Gali, Adam

AU - Carlsson, Patrick

AU - Gällström, Andreas

AU - Magnusson, Björn

AU - Son, N. T.

PY - 2009

Y1 - 2009

N2 - A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

AB - A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

KW - EPR

KW - ODMR

KW - Photoluminescence

KW - Silicon vacancy

UR - http://www.scopus.com/inward/record.url?scp=74349109048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74349109048&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.615-617.347

DO - 10.4028/www.scientific.net/MSF.615-617.347

M3 - Conference contribution

AN - SCOPUS:74349109048

SN - 9780878493340

VL - 615 617

T3 - Materials Science Forum

SP - 347

EP - 352

BT - Materials Science Forum

ER -