The silicon vacancy in SiC

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N. T. Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages347-352
Number of pages6
DOIs
Publication statusPublished - Dec 1 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

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Keywords

  • EPR
  • ODMR
  • Photoluminescence
  • Silicon vacancy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Janzén, E., Gali, A., Carlsson, P., Gällström, A., Magnusson, B., & Son, N. T. (2009). The silicon vacancy in SiC. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 347-352). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.347