The Si p partial density of states in SiNx (0 < x < 2.0)

J. Kojnok, E. Gyarmati, H. Nickel, A. Sza̧sz

Research output: Contribution to journalArticle

Abstract

Some properties of non-stoichiometric amorphous silicon nitride, SiNx (0 < x < 2.0), prepared by physical vapour deposition in which hydrogen was excluded from the process, were investigated by X-ray fluorescence spectroscopy. The SiKβ and SiKα emission lines were measured. A non-bonding p-type vacancy state on the top upper Si valence band is identified up to the composition x = 1.2. This state was not observed in other studies of hydrogenated SiNx: H systems. The N 2s state derived lower valence band was split from the upper valence band with 2 eV valence band gap. The observed non-linear dependence of the Si p-band on x is inconsistent with a two-phase (Si and Si3N4) linear superposition model of this semiconducting amorphous alloy. The random bonding model is consistent with this dependence.

Original languageEnglish
Pages (from-to)155-164
Number of pages10
JournalJournal of Non-Crystalline Solids
Volume155
Issue number2
DOIs
Publication statusPublished - Apr 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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