The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon

T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, K. I. Gritsaǐ, O. Kormann, J. Major, A. V. Stoǐkov, U. Zimmermann

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Abstract

A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n- and p-types ranging from 8.7 × 1013 to 4.1 × 1018 cm-3. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the μAl0 acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ Tq (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 1018 cm-3. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: |Ahf(Al)/2π| ∼ 2.5 × 106 s-1.

Original languageEnglish
Pages (from-to)1004-1009
Number of pages6
JournalJournal of Experimental and Theoretical Physics
Volume92
Issue number6
Publication statusPublished - Jun 2001

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magnetic moments
impurities
silicon
temperature dependence
muons
spin exchange
scattering
charge carriers
aluminum
temperature
polarization
magnetic fields
atoms
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mamedov, T. N., Andrianov, D. G., Herlach, D., Gorelkin, V. N., Gritsaǐ, K. I., Kormann, O., ... Zimmermann, U. (2001). The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon. Journal of Experimental and Theoretical Physics, 92(6), 1004-1009.

The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon. / Mamedov, T. N.; Andrianov, D. G.; Herlach, D.; Gorelkin, V. N.; Gritsaǐ, K. I.; Kormann, O.; Major, J.; Stoǐkov, A. V.; Zimmermann, U.

In: Journal of Experimental and Theoretical Physics, Vol. 92, No. 6, 06.2001, p. 1004-1009.

Research output: Contribution to journalArticle

Mamedov, TN, Andrianov, DG, Herlach, D, Gorelkin, VN, Gritsaǐ, KI, Kormann, O, Major, J, Stoǐkov, AV & Zimmermann, U 2001, 'The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon', Journal of Experimental and Theoretical Physics, vol. 92, no. 6, pp. 1004-1009.
Mamedov, T. N. ; Andrianov, D. G. ; Herlach, D. ; Gorelkin, V. N. ; Gritsaǐ, K. I. ; Kormann, O. ; Major, J. ; Stoǐkov, A. V. ; Zimmermann, U. / The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon. In: Journal of Experimental and Theoretical Physics. 2001 ; Vol. 92, No. 6. pp. 1004-1009.
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AU - Herlach, D.

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AU - Gritsaǐ, K. I.

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