The oxidation of Gd0.95Si0.05 layers

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Gd films are important for different applications, but their handling is very difficult because they are extremely reactive, mainly towards oxygen. This reactivity can be decreased by addition of small amount of Si (∼ 5 at%) diffused into Gd layer. Oxidation of the films and the chemical state of the components (Gd, O, Si) characterized by chemical shifts and by Gd/O ratio, were measured by X-ray photoelectron spectroscopy (XPS) and by Rutherford Backscattering (RBS) method. The diminished oxidation in presence of Si can be explained by the enrichment of Si at the grain boundaries and thereby forming a barrier against the oxygen diffusion into the Gd layer such that the oxidation decreased.

Original languageEnglish
Pages (from-to)1640-1642
Number of pages3
JournalVacuum
Volume41
Issue number7-9
DOIs
Publication statusPublished - 1990

Fingerprint

Oxidation
oxidation
Oxygen
Rutherford backscattering spectroscopy
Chemical shift
oxygen
chemical equilibrium
backscattering
Grain boundaries
X ray photoelectron spectroscopy
reactivity
grain boundaries
photoelectron spectroscopy
x rays

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The oxidation of Gd0.95Si0.05 layers. / Molnár, G.; Pető, G.; Kótai, E.; Guczi, L.

In: Vacuum, Vol. 41, No. 7-9, 1990, p. 1640-1642.

Research output: Contribution to journalArticle

Molnár, G. ; Pető, G. ; Kótai, E. ; Guczi, L. / The oxidation of Gd0.95Si0.05 layers. In: Vacuum. 1990 ; Vol. 41, No. 7-9. pp. 1640-1642.
@article{e25d0f3365bd428d80cc25ab153f9ed3,
title = "The oxidation of Gd0.95Si0.05 layers",
abstract = "Gd films are important for different applications, but their handling is very difficult because they are extremely reactive, mainly towards oxygen. This reactivity can be decreased by addition of small amount of Si (∼ 5 at{\%}) diffused into Gd layer. Oxidation of the films and the chemical state of the components (Gd, O, Si) characterized by chemical shifts and by Gd/O ratio, were measured by X-ray photoelectron spectroscopy (XPS) and by Rutherford Backscattering (RBS) method. The diminished oxidation in presence of Si can be explained by the enrichment of Si at the grain boundaries and thereby forming a barrier against the oxygen diffusion into the Gd layer such that the oxidation decreased.",
author = "G. Moln{\'a}r and G. Pető and E. K{\'o}tai and L. Guczi",
year = "1990",
doi = "10.1016/0042-207X(90)94041-N",
language = "English",
volume = "41",
pages = "1640--1642",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "7-9",

}

TY - JOUR

T1 - The oxidation of Gd0.95Si0.05 layers

AU - Molnár, G.

AU - Pető, G.

AU - Kótai, E.

AU - Guczi, L.

PY - 1990

Y1 - 1990

N2 - Gd films are important for different applications, but their handling is very difficult because they are extremely reactive, mainly towards oxygen. This reactivity can be decreased by addition of small amount of Si (∼ 5 at%) diffused into Gd layer. Oxidation of the films and the chemical state of the components (Gd, O, Si) characterized by chemical shifts and by Gd/O ratio, were measured by X-ray photoelectron spectroscopy (XPS) and by Rutherford Backscattering (RBS) method. The diminished oxidation in presence of Si can be explained by the enrichment of Si at the grain boundaries and thereby forming a barrier against the oxygen diffusion into the Gd layer such that the oxidation decreased.

AB - Gd films are important for different applications, but their handling is very difficult because they are extremely reactive, mainly towards oxygen. This reactivity can be decreased by addition of small amount of Si (∼ 5 at%) diffused into Gd layer. Oxidation of the films and the chemical state of the components (Gd, O, Si) characterized by chemical shifts and by Gd/O ratio, were measured by X-ray photoelectron spectroscopy (XPS) and by Rutherford Backscattering (RBS) method. The diminished oxidation in presence of Si can be explained by the enrichment of Si at the grain boundaries and thereby forming a barrier against the oxygen diffusion into the Gd layer such that the oxidation decreased.

UR - http://www.scopus.com/inward/record.url?scp=0025531730&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025531730&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(90)94041-N

DO - 10.1016/0042-207X(90)94041-N

M3 - Article

AN - SCOPUS:0025531730

VL - 41

SP - 1640

EP - 1642

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 7-9

ER -