The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both rφ and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.
ASJC Scopus subject areas
- Nuclear and High Energy Physics