The molecular structure of triphenylsilane from gas-phase electron diffraction

Béla Rozsondai, I. Hargittai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The molecular geometry of gaseous triphenylsilane has been determined by electron diffraction. The silicon bond angles are ideal tetrahedral within experimental error. The benzene rings are slightly elongated in the direction of the SiC bond. The experimental data are consistent with a C3 model and a mean torsional angle of 37°, in agreement with published molecular mechanics calculations. The electron diffraction bond lengths (with estimated total errors), among them rg(SiC) 1.872(4) Å and rg(CC mean) 1.403(3) Å, refer to a well-defined nuclear configuration and differ from the analogous parameters from an X-ray crystallographic study of the same molecule.

Original languageEnglish
Pages (from-to)269-276
Number of pages8
JournalJournal of Organometallic Chemistry
Volume334
Issue number3
DOIs
Publication statusPublished - Nov 10 1987

Fingerprint

Molecular Structure
Electron diffraction
Molecular structure
molecular structure
electron diffraction
Gases
Electrons
vapor phases
Molecular mechanics
Bond length
Silicon
Benzene
Mechanics
benzene
X-Rays
X rays
Molecules
Geometry
rings
silicon

ASJC Scopus subject areas

  • Biochemistry
  • Chemical Engineering (miscellaneous)
  • Inorganic Chemistry
  • Organic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Science (miscellaneous)
  • Materials Chemistry

Cite this

The molecular structure of triphenylsilane from gas-phase electron diffraction. / Rozsondai, Béla; Hargittai, I.

In: Journal of Organometallic Chemistry, Vol. 334, No. 3, 10.11.1987, p. 269-276.

Research output: Contribution to journalArticle

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