The molecular structure of tetramethoxysilane in the gas phase, an electron diffraction study

L. H. Boonstra, F. C. Mijlhoff, G. Renes, A. Spelbos, I. Hargittai

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The molecular structure of tetramethoxysilane was determined in the gas phase by electron diffraction. The molecule has S4 symmetry, slightly flattened along the axis. The SiO bonds are shorter than in methylsilylether, demonstrating the effect of electronegative substituents on the Si atom. The geometrical parameters (ra structure) are: Si-O bond 1.613 Å; C-O bond 1.414 Å; C-H bond 1.12 Å; O-Si-O angle bisected by S4 axis 115.5°; Si-O-C angle 122.3°; O-C-H angle 111°; methoxyl torsional angle 64°; methyl torsional angle 60°.

Original languageEnglish
Pages (from-to)129-135
Number of pages7
JournalJournal of Molecular Structure
Volume28
Issue number1
DOIs
Publication statusPublished - 1975

Fingerprint

Molecular Structure
Electron diffraction
Molecular structure
molecular structure
electron diffraction
Gases
Electrons
vapor phases
Atoms
Molecules
tetramethoxysilane
symmetry
atoms
molecules

ASJC Scopus subject areas

  • Structural Biology
  • Organic Chemistry
  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Materials Science (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

The molecular structure of tetramethoxysilane in the gas phase, an electron diffraction study. / Boonstra, L. H.; Mijlhoff, F. C.; Renes, G.; Spelbos, A.; Hargittai, I.

In: Journal of Molecular Structure, Vol. 28, No. 1, 1975, p. 129-135.

Research output: Contribution to journalArticle

Boonstra, L. H. ; Mijlhoff, F. C. ; Renes, G. ; Spelbos, A. ; Hargittai, I. / The molecular structure of tetramethoxysilane in the gas phase, an electron diffraction study. In: Journal of Molecular Structure. 1975 ; Vol. 28, No. 1. pp. 129-135.
@article{8ea82d7504204e85a3d950db5ced8d8e,
title = "The molecular structure of tetramethoxysilane in the gas phase, an electron diffraction study",
abstract = "The molecular structure of tetramethoxysilane was determined in the gas phase by electron diffraction. The molecule has S4 symmetry, slightly flattened along the axis. The SiO bonds are shorter than in methylsilylether, demonstrating the effect of electronegative substituents on the Si atom. The geometrical parameters (ra structure) are: Si-O bond 1.613 {\AA}; C-O bond 1.414 {\AA}; C-H bond 1.12 {\AA}; O-Si-O angle bisected by S4 axis 115.5°; Si-O-C angle 122.3°; O-C-H angle 111°; methoxyl torsional angle 64°; methyl torsional angle 60°.",
author = "Boonstra, {L. H.} and Mijlhoff, {F. C.} and G. Renes and A. Spelbos and I. Hargittai",
year = "1975",
doi = "10.1016/0022-2860(75)80049-4",
language = "English",
volume = "28",
pages = "129--135",
journal = "Journal of Molecular Structure",
issn = "0022-2860",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - The molecular structure of tetramethoxysilane in the gas phase, an electron diffraction study

AU - Boonstra, L. H.

AU - Mijlhoff, F. C.

AU - Renes, G.

AU - Spelbos, A.

AU - Hargittai, I.

PY - 1975

Y1 - 1975

N2 - The molecular structure of tetramethoxysilane was determined in the gas phase by electron diffraction. The molecule has S4 symmetry, slightly flattened along the axis. The SiO bonds are shorter than in methylsilylether, demonstrating the effect of electronegative substituents on the Si atom. The geometrical parameters (ra structure) are: Si-O bond 1.613 Å; C-O bond 1.414 Å; C-H bond 1.12 Å; O-Si-O angle bisected by S4 axis 115.5°; Si-O-C angle 122.3°; O-C-H angle 111°; methoxyl torsional angle 64°; methyl torsional angle 60°.

AB - The molecular structure of tetramethoxysilane was determined in the gas phase by electron diffraction. The molecule has S4 symmetry, slightly flattened along the axis. The SiO bonds are shorter than in methylsilylether, demonstrating the effect of electronegative substituents on the Si atom. The geometrical parameters (ra structure) are: Si-O bond 1.613 Å; C-O bond 1.414 Å; C-H bond 1.12 Å; O-Si-O angle bisected by S4 axis 115.5°; Si-O-C angle 122.3°; O-C-H angle 111°; methoxyl torsional angle 64°; methyl torsional angle 60°.

UR - http://www.scopus.com/inward/record.url?scp=0001680134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001680134&partnerID=8YFLogxK

U2 - 10.1016/0022-2860(75)80049-4

DO - 10.1016/0022-2860(75)80049-4

M3 - Article

AN - SCOPUS:0001680134

VL - 28

SP - 129

EP - 135

JO - Journal of Molecular Structure

JF - Journal of Molecular Structure

SN - 0022-2860

IS - 1

ER -