The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

L. Dobos, L. Tóth, B. Pécz, Z. E. Horváth, A. L. Tóth, B. Beaumont, Z. Bougrioua

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Ti(40 nm)/Au(120 nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400 °C to 900 °C for 10 min in nitrogen, respectively. The interaction between the contact metallization and the GaN epitaxial layer (on sapphire) was investigated by electron microscopy and X-ray diffraction. It was found that for an annealing at a temperature equal or higher than 700 °C, the gold diffused through Ti layer and Au-rich grains were formed under this Ti layer. Between the Au-rich grains and the n-type GaN layer a new Ti-rich thin layer was identified by XTEM. High resolution images and X-ray data showed that it's TiN0.26 that was formed at the metal/semiconductor interface. FESEM investigations showed that Ti/Au contacts annealed in nitrogen still have a very smooth surface morphology.

Original languageEnglish
Pages (from-to)118-120
Number of pages3
JournalMicroelectronic Engineering
Publication statusPublished - Feb 1 2012



  • Contacts
  • GaN
  • Solid phase reaction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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