The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

L. Dobos, L. Tóth, B. Pécz, Z. Horváth, A. Tóth, B. Beaumont, Z. Bougrioua

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Ti(40 nm)/Au(120 nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400 °C to 900 °C for 10 min in nitrogen, respectively. The interaction between the contact metallization and the GaN epitaxial layer (on sapphire) was investigated by electron microscopy and X-ray diffraction. It was found that for an annealing at a temperature equal or higher than 700 °C, the gold diffused through Ti layer and Au-rich grains were formed under this Ti layer. Between the Au-rich grains and the n-type GaN layer a new Ti-rich thin layer was identified by XTEM. High resolution images and X-ray data showed that it's TiN0.26 that was formed at the metal/semiconductor interface. FESEM investigations showed that Ti/Au contacts annealed in nitrogen still have a very smooth surface morphology.

Original languageEnglish
Pages (from-to)118-120
Number of pages3
JournalMicroelectronic Engineering
Volume90
DOIs
Publication statusPublished - Feb 2012

Fingerprint

Aluminum Oxide
Sapphire
electric contacts
Nitrogen
nitrogen
microstructure
Microstructure
Epitaxial layers
Image resolution
Metallizing
Gold
Electron microscopy
Surface morphology
Metals
Annealing
Semiconductor materials
sapphire
X ray diffraction
X rays
electron microscopy

Keywords

  • Contacts
  • GaN
  • Solid phase reaction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen. / Dobos, L.; Tóth, L.; Pécz, B.; Horváth, Z.; Tóth, A.; Beaumont, B.; Bougrioua, Z.

In: Microelectronic Engineering, Vol. 90, 02.2012, p. 118-120.

Research output: Contribution to journalArticle

@article{a50e2e0f9ebd4b15bac9a896bcf593c6,
title = "The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen",
abstract = "Ti(40 nm)/Au(120 nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400 °C to 900 °C for 10 min in nitrogen, respectively. The interaction between the contact metallization and the GaN epitaxial layer (on sapphire) was investigated by electron microscopy and X-ray diffraction. It was found that for an annealing at a temperature equal or higher than 700 °C, the gold diffused through Ti layer and Au-rich grains were formed under this Ti layer. Between the Au-rich grains and the n-type GaN layer a new Ti-rich thin layer was identified by XTEM. High resolution images and X-ray data showed that it's TiN0.26 that was formed at the metal/semiconductor interface. FESEM investigations showed that Ti/Au contacts annealed in nitrogen still have a very smooth surface morphology.",
keywords = "Contacts, GaN, Solid phase reaction, Transmission electron microscopy",
author = "L. Dobos and L. T{\'o}th and B. P{\'e}cz and Z. Horv{\'a}th and A. T{\'o}th and B. Beaumont and Z. Bougrioua",
year = "2012",
month = "2",
doi = "10.1016/j.mee.2011.05.011",
language = "English",
volume = "90",
pages = "118--120",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

AU - Dobos, L.

AU - Tóth, L.

AU - Pécz, B.

AU - Horváth, Z.

AU - Tóth, A.

AU - Beaumont, B.

AU - Bougrioua, Z.

PY - 2012/2

Y1 - 2012/2

N2 - Ti(40 nm)/Au(120 nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400 °C to 900 °C for 10 min in nitrogen, respectively. The interaction between the contact metallization and the GaN epitaxial layer (on sapphire) was investigated by electron microscopy and X-ray diffraction. It was found that for an annealing at a temperature equal or higher than 700 °C, the gold diffused through Ti layer and Au-rich grains were formed under this Ti layer. Between the Au-rich grains and the n-type GaN layer a new Ti-rich thin layer was identified by XTEM. High resolution images and X-ray data showed that it's TiN0.26 that was formed at the metal/semiconductor interface. FESEM investigations showed that Ti/Au contacts annealed in nitrogen still have a very smooth surface morphology.

AB - Ti(40 nm)/Au(120 nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400 °C to 900 °C for 10 min in nitrogen, respectively. The interaction between the contact metallization and the GaN epitaxial layer (on sapphire) was investigated by electron microscopy and X-ray diffraction. It was found that for an annealing at a temperature equal or higher than 700 °C, the gold diffused through Ti layer and Au-rich grains were formed under this Ti layer. Between the Au-rich grains and the n-type GaN layer a new Ti-rich thin layer was identified by XTEM. High resolution images and X-ray data showed that it's TiN0.26 that was formed at the metal/semiconductor interface. FESEM investigations showed that Ti/Au contacts annealed in nitrogen still have a very smooth surface morphology.

KW - Contacts

KW - GaN

KW - Solid phase reaction

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=82555174399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82555174399&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.05.011

DO - 10.1016/j.mee.2011.05.011

M3 - Article

VL - 90

SP - 118

EP - 120

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -