The mechanism of interface state passivation by NO

P. Deák, T. Hornos, Ch Thill, J. Knaup, A. Gali, Th Frauenheim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped 10 15-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.

Original languageEnglish
Pages (from-to)541-544
Number of pages4
JournalMaterials Science Forum
Volume556-557
Publication statusPublished - 2007

Fingerprint

Nitridation
Interface states
Passivation
passivity
Carbon
Doping (additives)
Oxidation
Temperature
oxidation
carbon
temperature

Keywords

  • Interface
  • MOS
  • Nitridation
  • Oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Deák, P., Hornos, T., Thill, C., Knaup, J., Gali, A., & Frauenheim, T. (2007). The mechanism of interface state passivation by NO. Materials Science Forum, 556-557, 541-544.

The mechanism of interface state passivation by NO. / Deák, P.; Hornos, T.; Thill, Ch; Knaup, J.; Gali, A.; Frauenheim, Th.

In: Materials Science Forum, Vol. 556-557, 2007, p. 541-544.

Research output: Contribution to journalArticle

Deák, P, Hornos, T, Thill, C, Knaup, J, Gali, A & Frauenheim, T 2007, 'The mechanism of interface state passivation by NO', Materials Science Forum, vol. 556-557, pp. 541-544.
Deák P, Hornos T, Thill C, Knaup J, Gali A, Frauenheim T. The mechanism of interface state passivation by NO. Materials Science Forum. 2007;556-557:541-544.
Deák, P. ; Hornos, T. ; Thill, Ch ; Knaup, J. ; Gali, A. ; Frauenheim, Th. / The mechanism of interface state passivation by NO. In: Materials Science Forum. 2007 ; Vol. 556-557. pp. 541-544.
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