The investigation of Ge-Si layer structures by means of the etching rate method (ERM)

J. Pfeifer, É Sz Haraszthy

Research output: Contribution to journalArticle

Original languageEnglish
JournalThin Solid Films
Volume20
Issue number2
DOIs
Publication statusPublished - 1974

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The investigation of Ge-Si layer structures by means of the etching rate method (ERM). / Pfeifer, J.; Haraszthy, É Sz.

In: Thin Solid Films, Vol. 20, No. 2, 1974.

Research output: Contribution to journalArticle

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