The interaction of positive muons with photogenerated charge carriers in crystalline silicon

R. Scheuermann, J. Major, A. Seeger, L. Schimmele, J. Schmidl, D. Herlach

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Photoinduced effects on the dynamics of the diamagnetic muon species (μd) and of bond-centred muonium MuBC0 in crystalline silicon were studied as a function of temperature and doping. Below 40 K, the photoinduced relaxation in boron-doped as well as undoped silicon can be explained by the temperature and doping dependence of the mobility of the photogenerated charge carriers. In undoped silicon, the observed photoinduced enhancement of the precession amplitude and of the muon-spin relaxation of the diamagnetic signal indicates that a long-living intermediate diamagnetic state is formed in the illuminated samples.

Original languageEnglish
Pages (from-to)534-537
Number of pages4
JournalPhysica B: Condensed Matter
Volume289-290
DOIs
Publication statusPublished - Jan 1 2000
Event8th International Conference on Muon Spin Rotation, Relaxation and Resonance (muSR'99) - Les Diablerets, Switzerland
Duration: Aug 30 1999Sep 3 1999

Keywords

  • Muonium dynamics
  • Photoexcitation
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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