The initial states of wetting and spreading of Sn on Al surfaces

E. Klein, B. Schwarz, C. Eisenmenger-Sittner, C. Tomastik, P. Barna, A. Kovács

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Tin (Sn) deposited on polycrystalline aluminium (Al) surfaces shows a Stranski-Krastanov growth mode which means that before Sn islands nucleate a thin Sn wetting layer is formed. If the wetting layer is removed from the Al surface by sputter cleaning in UHV it reforms by a solid state wetting process. The sources of the Sn atoms forming the wetting layer are the Sn islands, which are not removed from the Al surface due to their size. Nonetheless, it was observed that not every island acts as an Sn emitter. In this work, we show that this selective Sn emission is a consequence of the chemical composition and the crystallographic structure of the Sn islands. Regarding the chemical composition of the Sn islands each residual trace of oxygen has to be removed to facilitate the emission of Sn atoms from the island boundaries. In addition wetting is only initiated if the sputter cleaning process results in a visible damage of the islands, thus increasing the roughness of their surface. From this rough interface Sn atoms can emerge more easily than from a crystallographically smooth surface due to their lower coordination. By monitoring line scans obtained from scanning auger electron spectroscopy the diffusion coefficient of the Sn atoms could be estimated from the progress of the rim of the wetting layer around the islands.

Original languageEnglish
Pages (from-to)74-80
Number of pages7
JournalVacuum
Volume80
Issue number1-3
DOIs
Publication statusPublished - Oct 14 2005

Fingerprint

Aluminum
wetting
Wetting
aluminum
Atoms
Cleaning
cleaning
atoms
chemical composition
Tin
Auger electron spectroscopy
Chemical analysis
Surface roughness
rims
Oxygen
Auger spectroscopy
Scanning
electron spectroscopy
tin
emitters

Keywords

  • Kinetic Monte-Carlo
  • Spreading
  • Surface diffusion
  • Vapor deposition
  • Wetting

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Klein, E., Schwarz, B., Eisenmenger-Sittner, C., Tomastik, C., Barna, P., & Kovács, A. (2005). The initial states of wetting and spreading of Sn on Al surfaces. Vacuum, 80(1-3), 74-80. https://doi.org/10.1016/j.vacuum.2005.07.036

The initial states of wetting and spreading of Sn on Al surfaces. / Klein, E.; Schwarz, B.; Eisenmenger-Sittner, C.; Tomastik, C.; Barna, P.; Kovács, A.

In: Vacuum, Vol. 80, No. 1-3, 14.10.2005, p. 74-80.

Research output: Contribution to journalArticle

Klein, E, Schwarz, B, Eisenmenger-Sittner, C, Tomastik, C, Barna, P & Kovács, A 2005, 'The initial states of wetting and spreading of Sn on Al surfaces', Vacuum, vol. 80, no. 1-3, pp. 74-80. https://doi.org/10.1016/j.vacuum.2005.07.036
Klein E, Schwarz B, Eisenmenger-Sittner C, Tomastik C, Barna P, Kovács A. The initial states of wetting and spreading of Sn on Al surfaces. Vacuum. 2005 Oct 14;80(1-3):74-80. https://doi.org/10.1016/j.vacuum.2005.07.036
Klein, E. ; Schwarz, B. ; Eisenmenger-Sittner, C. ; Tomastik, C. ; Barna, P. ; Kovács, A. / The initial states of wetting and spreading of Sn on Al surfaces. In: Vacuum. 2005 ; Vol. 80, No. 1-3. pp. 74-80.
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AB - Tin (Sn) deposited on polycrystalline aluminium (Al) surfaces shows a Stranski-Krastanov growth mode which means that before Sn islands nucleate a thin Sn wetting layer is formed. If the wetting layer is removed from the Al surface by sputter cleaning in UHV it reforms by a solid state wetting process. The sources of the Sn atoms forming the wetting layer are the Sn islands, which are not removed from the Al surface due to their size. Nonetheless, it was observed that not every island acts as an Sn emitter. In this work, we show that this selective Sn emission is a consequence of the chemical composition and the crystallographic structure of the Sn islands. Regarding the chemical composition of the Sn islands each residual trace of oxygen has to be removed to facilitate the emission of Sn atoms from the island boundaries. In addition wetting is only initiated if the sputter cleaning process results in a visible damage of the islands, thus increasing the roughness of their surface. From this rough interface Sn atoms can emerge more easily than from a crystallographically smooth surface due to their lower coordination. By monitoring line scans obtained from scanning auger electron spectroscopy the diffusion coefficient of the Sn atoms could be estimated from the progress of the rim of the wetting layer around the islands.

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