The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs

C. Ghezzi, R. Mosca, A. Bosacchi, S. Franchi, E. Gombia

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The significance of both the density N, and the apparent built-in voltage Va, as usually obtained from C-V measurements on Schottky barriers containing DX centers, is clarified. It is also shown that, owing to the non-equilibrium occupancy of the DX center, at low temperature the electron density in the flat-band region depends on the cooling rate of the sample.

Original languageEnglish
Pages (from-to)400-404
Number of pages5
JournalApplied Surface Science
Volume50
Issue number1-4
DOIs
Publication statusPublished - Jun 2 1991

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Carrier concentration
aluminum gallium arsenides
Capacitance
capacitance
Cooling
Electric potential
cooling
Temperature
electric potential

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs. / Ghezzi, C.; Mosca, R.; Bosacchi, A.; Franchi, S.; Gombia, E.

In: Applied Surface Science, Vol. 50, No. 1-4, 02.06.1991, p. 400-404.

Research output: Contribution to journalArticle

Ghezzi, C. ; Mosca, R. ; Bosacchi, A. ; Franchi, S. ; Gombia, E. / The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs. In: Applied Surface Science. 1991 ; Vol. 50, No. 1-4. pp. 400-404.
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