In this work we report on the growth of cubic silicon carbide using CBr 4 and silane as precursors at different C 3H 8/CBr 4 flow ratios. The layers were deposited on 2" (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H 2 atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr 4 to the standard SiH 4 and C 3H 8 precursor can change the crystalline nature and the morphology of the grown SiC.