The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers

G. Attolini, M. Bosi, B. E. Watts, G. Battistig, L. Dobos, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we report on the growth of cubic silicon carbide using CBr 4 and silane as precursors at different C 3H 8/CBr 4 flow ratios. The layers were deposited on 2" (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H 2 atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr 4 to the standard SiH 4 and C 3H 8 precursor can change the crystalline nature and the morphology of the grown SiC.

Original languageEnglish
Title of host publicationHeteroSiC and WASMPE 2011
Pages22-26
Number of pages5
DOIs
Publication statusPublished - Feb 15 2012
Event4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011 - Tours, France
Duration: Jun 27 2011Jun 30 2011

Publication series

NameMaterials Science Forum
Volume711
ISSN (Print)0255-5476

Other

Other4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011
CountryFrance
CityTours
Period6/27/116/30/11

Keywords

  • Carbon tetrabromide
  • Silicon carbide
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Attolini, G., Bosi, M., Watts, B. E., Battistig, G., Dobos, L., & Pécz, B. (2012). The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers. In HeteroSiC and WASMPE 2011 (pp. 22-26). (Materials Science Forum; Vol. 711). https://doi.org/10.4028/www.scientific.net/MSF.711.22