The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers

G. Attolini, M. Bosi, B. E. Watts, G. Battistig, L. Dobos, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we report on the growth of cubic silicon carbide using CBr 4 and silane as precursors at different C 3H 8/CBr 4 flow ratios. The layers were deposited on 2" (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H 2 atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr 4 to the standard SiH 4 and C 3H 8 precursor can change the crystalline nature and the morphology of the grown SiC.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages22-26
Number of pages5
Volume711
DOIs
Publication statusPublished - 2012
Event4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011 - Tours, France
Duration: Jun 27 2011Jun 30 2011

Publication series

NameMaterials Science Forum
Volume711
ISSN (Print)02555476

Other

Other4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011
CountryFrance
CityTours
Period6/27/116/30/11

Fingerprint

Silanes
Vapor phase epitaxy
Induction heating
Epitaxial growth
Phase composition
Silicon carbide
Atmospheric pressure
induction heating
cold walls
Etching
Atomic force microscopy
Gases
Crystalline materials
Transmission electron microscopy
silanes
silicon carbides
Defects
Scanning electron microscopy
atmospheric pressure
reactors

Keywords

  • Carbon tetrabromide
  • Silicon carbide
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Attolini, G., Bosi, M., Watts, B. E., Battistig, G., Dobos, L., & Pécz, B. (2012). The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers. In Materials Science Forum (Vol. 711, pp. 22-26). (Materials Science Forum; Vol. 711). https://doi.org/10.4028/www.scientific.net/MSF.711.22

The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers. / Attolini, G.; Bosi, M.; Watts, B. E.; Battistig, G.; Dobos, L.; Pécz, B.

Materials Science Forum. Vol. 711 2012. p. 22-26 (Materials Science Forum; Vol. 711).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Attolini, G, Bosi, M, Watts, BE, Battistig, G, Dobos, L & Pécz, B 2012, The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers. in Materials Science Forum. vol. 711, Materials Science Forum, vol. 711, pp. 22-26, 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC and WASMPE 2011, Tours, France, 6/27/11. https://doi.org/10.4028/www.scientific.net/MSF.711.22
Attolini, G. ; Bosi, M. ; Watts, B. E. ; Battistig, G. ; Dobos, L. ; Pécz, B. / The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers. Materials Science Forum. Vol. 711 2012. pp. 22-26 (Materials Science Forum).
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