The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra

M. Krawczyk, A. Jablonski, S. Tougaard, J. Toth, D. Varga, G. Gergely

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

GaAs samples have been studied with a hemispherical analyser of high resolution (type ESA 31). The analyser covers the energy range 10-5000 eV with controlled energy resolution. Prior to measurements, sample surfaces have been exposed to Ar+ ions in order to amorphise the surface layer. This procedure resulted in Ga enrichment (70-85 at.% Ga as determined by XPS). The elastic peak and EELS spectra were measured in the loss range E-E1 of 50 eV. The elastic peak intensity ratios of GaAs sample and the Ni reference were used to determine the IMFP in GaAs. The relations between these ratios and the IMFP have been determined from Monte Carlo simulation of the elastic backscattering effect. The values of the IMFP resulting from this procedure are in reasonable agreement with the literature data. The inelastic scattering cross-sections have been determined using the Tougaard procedure. The energy loss distributions λiK are presented in the 0.2-5.0 keV range.

Original languageEnglish
Pages (from-to)491-495
Number of pages5
JournalSurface Science
Volume402-404
Publication statusPublished - May 15 1998

Fingerprint

Inelastic scattering
scattering cross sections
mean free path
inelastic scattering
energy spectra
electron energy
Electrons
Electron energy loss spectroscopy
Backscattering
Energy dissipation
electrons
X ray photoelectron spectroscopy
European Space Agency
backscattering
surface layers
Ions
energy dissipation
energy
high resolution
gallium arsenide

Keywords

  • Amorphous surfaces
  • Elastic peak electron spectroscopy
  • Electron energy loss spectroscopy
  • Electron inelastic mean free path
  • Gallium arsenide
  • Inelastic electron scattering cross-section
  • Monte Carlo simulation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra. / Krawczyk, M.; Jablonski, A.; Tougaard, S.; Toth, J.; Varga, D.; Gergely, G.

In: Surface Science, Vol. 402-404, 15.05.1998, p. 491-495.

Research output: Contribution to journalArticle

@article{92ee61e714d6460bbefca9615a4c35e2,
title = "The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra",
abstract = "GaAs samples have been studied with a hemispherical analyser of high resolution (type ESA 31). The analyser covers the energy range 10-5000 eV with controlled energy resolution. Prior to measurements, sample surfaces have been exposed to Ar+ ions in order to amorphise the surface layer. This procedure resulted in Ga enrichment (70-85 at.{\%} Ga as determined by XPS). The elastic peak and EELS spectra were measured in the loss range E-E1 of 50 eV. The elastic peak intensity ratios of GaAs sample and the Ni reference were used to determine the IMFP in GaAs. The relations between these ratios and the IMFP have been determined from Monte Carlo simulation of the elastic backscattering effect. The values of the IMFP resulting from this procedure are in reasonable agreement with the literature data. The inelastic scattering cross-sections have been determined using the Tougaard procedure. The energy loss distributions λiK are presented in the 0.2-5.0 keV range.",
keywords = "Amorphous surfaces, Elastic peak electron spectroscopy, Electron energy loss spectroscopy, Electron inelastic mean free path, Gallium arsenide, Inelastic electron scattering cross-section, Monte Carlo simulation",
author = "M. Krawczyk and A. Jablonski and S. Tougaard and J. Toth and D. Varga and G. Gergely",
year = "1998",
month = "5",
day = "15",
language = "English",
volume = "402-404",
pages = "491--495",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",

}

TY - JOUR

T1 - The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra

AU - Krawczyk, M.

AU - Jablonski, A.

AU - Tougaard, S.

AU - Toth, J.

AU - Varga, D.

AU - Gergely, G.

PY - 1998/5/15

Y1 - 1998/5/15

N2 - GaAs samples have been studied with a hemispherical analyser of high resolution (type ESA 31). The analyser covers the energy range 10-5000 eV with controlled energy resolution. Prior to measurements, sample surfaces have been exposed to Ar+ ions in order to amorphise the surface layer. This procedure resulted in Ga enrichment (70-85 at.% Ga as determined by XPS). The elastic peak and EELS spectra were measured in the loss range E-E1 of 50 eV. The elastic peak intensity ratios of GaAs sample and the Ni reference were used to determine the IMFP in GaAs. The relations between these ratios and the IMFP have been determined from Monte Carlo simulation of the elastic backscattering effect. The values of the IMFP resulting from this procedure are in reasonable agreement with the literature data. The inelastic scattering cross-sections have been determined using the Tougaard procedure. The energy loss distributions λiK are presented in the 0.2-5.0 keV range.

AB - GaAs samples have been studied with a hemispherical analyser of high resolution (type ESA 31). The analyser covers the energy range 10-5000 eV with controlled energy resolution. Prior to measurements, sample surfaces have been exposed to Ar+ ions in order to amorphise the surface layer. This procedure resulted in Ga enrichment (70-85 at.% Ga as determined by XPS). The elastic peak and EELS spectra were measured in the loss range E-E1 of 50 eV. The elastic peak intensity ratios of GaAs sample and the Ni reference were used to determine the IMFP in GaAs. The relations between these ratios and the IMFP have been determined from Monte Carlo simulation of the elastic backscattering effect. The values of the IMFP resulting from this procedure are in reasonable agreement with the literature data. The inelastic scattering cross-sections have been determined using the Tougaard procedure. The energy loss distributions λiK are presented in the 0.2-5.0 keV range.

KW - Amorphous surfaces

KW - Elastic peak electron spectroscopy

KW - Electron energy loss spectroscopy

KW - Electron inelastic mean free path

KW - Gallium arsenide

KW - Inelastic electron scattering cross-section

KW - Monte Carlo simulation

UR - http://www.scopus.com/inward/record.url?scp=0031639293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031639293&partnerID=8YFLogxK

M3 - Article

VL - 402-404

SP - 491

EP - 495

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -